Transistor Design For Use In Advanced Nanometer Flash Memory Devices

Invention Application

US20160141034A1 Transistor Design For Use In Advanced Nanometer Flash Memory Devices 有权

Title translation: 用于高级纳米闪存器件的晶体管设计

Patent Title: Transistor Design For Use In Advanced Nanometer Flash Memory Devices
Patent Title (中): 用于高级纳米闪存器件的晶体管设计
Application No.: US15003811

Application Date: 2016-01-22
Publication No.: US20160141034A1

Publication Date: 2016-05-19
Inventor: Hieu Van Tran , Hung Quoc Nguyen , Anh Ly , Thuan Vu
Applicant: Silicon Storage Technology, Inc.
Main IPC: G11C16/08
IPC: G11C16/08

Abstract:

Improved PMOS and NMOS transistor designs for sensing circuitry use in advanced nanometer flash memory devices are disclosed.

Abstract(Chinese):

公开了用于高级纳米闪存器件中的感测电路的改进的PMOS和NMOS晶体管设计。

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