Invention Application
US20160141444A1 METHOD AND APPARATUS FORMING COPPER (Cu) OR ANTIMONY (Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE
审中-公开
在光伏器件中形成铜（Cu）或抗微生物（Sb）掺杂的ZINC陶瓷和锑化锌陶瓷层的方法和装置
- Patent Title: METHOD AND APPARATUS FORMING COPPER (Cu) OR ANTIMONY (Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE
- Patent Title (中): 在光伏器件中形成铜（Cu）或抗微生物（Sb）掺杂的ZINC陶瓷和锑化锌陶瓷层的方法和装置
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Application No.: US15001794Application Date: 2016-01-20
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Publication No.: US20160141444A1Publication Date: 2016-05-19
- Inventor: Long Chen , Pawel Mrozek
- Applicant: First Solar, Inc.
- Main IPC: H01L31/18
- IPC: H01L31/18 ; C25D21/02 ; C25D21/12 ; C25D17/00
Abstract:
A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.
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