公开(公告)号：US20160141444A1

公开(公告)日：2016-05-19

申请号：US15001794

申请日：2016-01-20

Applicant: First Solar, Inc.

Inventor： Long Chen ,  Pawel Mrozek

IPC: H01L31/18 ,  C25D21/02 ,  C25D21/12 ,  C25D17/00

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US20140273334A1

公开(公告)日：2014-09-18

申请号：US14212584

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Pawel Mrozek ,  Gang Xiong ,  San Yu

IPC: H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/186 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。

公开(公告)号：US09269850B2

公开(公告)日：2016-02-23

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Long Cheng ,  Pawel Mrozek

IPC: H01L31/18 ,  H01L21/02 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US09450115B2

公开(公告)日：2016-09-20

申请号：US14212584

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Pawel Mrozek ,  Gang Xiong ,  San Yu

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/186 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。

公开(公告)号：US20140370649A1

公开(公告)日：2014-12-18

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Pawel Mrozek ,  Long Cheng

IPC: H01L31/18 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。