发明申请
US20160141529A1 Method For Producing An Organic CMOS Circuit And Organic CMOS Circuit Protected Against UV Radiation
有权
生产有机CMOS电路的方法和有机CMOS电路保护紫外线辐射
- 专利标题： Method For Producing An Organic CMOS Circuit And Organic CMOS Circuit Protected Against UV Radiation
- 专利标题（中）： 生产有机CMOS电路的方法和有机CMOS电路保护紫外线辐射
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申请号： US14899888申请日： 2014-07-31
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公开(公告)号： US20160141529A1公开(公告)日： 2016-05-19
- 发明人: Mohammed Benwadih , Romain Coppard , Olivier Poncelet
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 优先权： FR1357883 20130808
- 国际申请： PCT/FR2014/051993 WO 20140731
- 主分类号： H01L51/05
- IPC分类号： H01L51/05 ; H01L51/00 ; H01L27/28
摘要：
An organic CMOS circuit including a substrate having an N-type organic transistor and a P-type organic transistor formed thereon, the transistors respectively including a layer of N-type semiconductor material and a layer of P-type semiconductor material. A surface of each of the semiconductor material layers, opposite to the substrate, is covered with an anti-ultraviolet layer made of electrically-insulating material absorbing and/or reflecting ultra-violet rays.
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