Invention Application
- Patent Title: SEMICONDUCTOR DEVICES INCLUDING A STRESSOR IN A RECESS AND METHODS OF FORMING THE SAME
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Application No.: US15009276Application Date: 2016-01-28
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Publication No.: US20160148930A1Publication Date: 2016-05-26
- Inventor: Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
- Applicant: Dong-Suk Shin , Hyun-Chul Kang , Dong-Hyun Roh , Pan-Kwi Park , Geo-Myung Shin , Nae-In Lee , Chul-Woong Lee , Hoi-Sung Chung , Young-Tak Kim
- Priority: KR10-2012-0133248 20121122; KR10-2013-0001179 20130104
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/10 ; H01L27/02 ; H01L29/165 ; H01L29/78

Abstract:
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.
Public/Granted literature
- US09548301B2 Semiconductor devices including a stressor in a recess and methods of forming the same Public/Granted day:2017-01-17
Information query
IPC分类: