Invention Application
- Patent Title: METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT
- Patent Title (中): 制造发光元件的方法
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Application No.: US14947716Application Date: 2015-11-20
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Publication No.: US20160149085A1Publication Date: 2016-05-26
- Inventor: Kazuki KASHIMOTO , Masafumi ITASAKA , Hisashi KASAI , Naoki AZUMA
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Priority: JP2014-237127 20141121
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/40 ; H01L33/00

Abstract:
A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.
Public/Granted literature
- US09553238B2 Method of manufacturing light emitting element Public/Granted day:2017-01-24
Information query
IPC分类: