Invention Application
- Patent Title: FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING
- Patent Title (中): 使用高功率脉冲磁控溅射形成存储器
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Application No.: US14986757Application Date: 2016-01-04
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Publication No.: US20160155619A1Publication Date: 2016-06-02
- Inventor: Yongjun Jeff Hu , Everett A. McTeer , John A. Smythe, III , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34
Abstract:
Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.
Information query
