Invention Application
US20160155619A1 FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING 审中-公开
使用高功率脉冲磁控溅射形成存储器

FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING
Abstract:
Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.
Information query
Patent Agency Ranking
0/0