Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US15018477Application Date: 2016-02-08
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Publication No.: US20160155751A1Publication Date: 2016-06-02
- Inventor: Yoo-cheol SHIN , Young-woo PARK , Jae-duk LEE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2013-0135837 20131108
- Main IPC: H01L27/115
- IPC: H01L27/115

Abstract:
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on the polysilicon layer and overlapping the peripheral circuit region, the peripheral circuit region being under the memory cell array region, an upper interconnection layer on the memory cell array region, and a vertical contact through the memory cell array region and the polysilicon layer, the vertical contact connecting the upper interconnection layer to the peripheral circuit region.
Public/Granted literature
- US09905570B2 Semiconductor device with vertical memory Public/Granted day:2018-02-27
Information query
IPC分类: