An embodiment includes a semiconductor light-emitting device comprising: an electrode pad; a first under-barrier metal (UBM) layer stacked on the electrode pad; a second UBM layer stacked on the first UBM layer and having a multilayered structure including at least two layers; and a solder bump disposed on the second UBM layer, wherein adhesion between the second UBM layer and the first UBM layer is higher than adhesion between the first UBM layer and the solder bump.