公开(公告)号：US20190027649A1

公开(公告)日：2019-01-24

申请号：US15876435

申请日：2018-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon YOON ,  Jae-in SIM ,  Gi-bum KIM ,  Ha-yeong SON ,  Young-sub SHIN

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/08 ,  H01L33/40 ,  H01L33/60 ,  H01L21/02 ,  H01L25/075

CPC classification number: H01L33/24 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L51/5218 ,  H01L51/5234

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.

公开(公告)号：US20140252390A1

公开(公告)日：2014-09-11

申请号：US14154312

申请日：2014-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon YOON ,  Gi-bum KIM ,  Sang-yeon KIM ,  Sang-yeob SONG ,  Won-goo HUR

IPC: H01L33/10 ,  H01L33/60

CPC classification number: H01L33/60 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/13

Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Abstract translation: 半导体发光器件包括具有发光结构的半导体区域，形成在半导体区域上的电极层，以及反射保护结构，其延伸暴露电极层的上表面并覆盖与电极层相邻的半导体区域 。

公开(公告)号：US20160163663A1

公开(公告)日：2016-06-09

申请号：US14958922

申请日：2015-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi-bum KIM ,  Sang-hyun LEE ,  Ho-seob LEE

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/13 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/02126 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05576 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/01079

Abstract: An embodiment includes a semiconductor light-emitting device comprising: an electrode pad; a first under-barrier metal (UBM) layer stacked on the electrode pad; a second UBM layer stacked on the first UBM layer and having a multilayered structure including at least two layers; and a solder bump disposed on the second UBM layer, wherein adhesion between the second UBM layer and the first UBM layer is higher than adhesion between the first UBM layer and the solder bump.

Abstract translation: 实施例包括半导体发光器件，包括：电极焊盘; 堆叠在所述电极焊盘上的第一下阻挡金属（UBM）层; 第二UBM层，堆叠在第一UBM层上并且具有包括至少两层的多层结构; 以及设置在所述第二UBM层上的焊料凸块，其中所述第二UBM层和所述第一UBM层之间的粘附性高于所述第一UBM层和所述焊料凸块之间的粘附。

公开(公告)号：US20160141457A1

公开(公告)日：2016-05-19

申请号：US14939817

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-hoon HA ,  Sang-yeob SONG ,  Gi-bum KIM ,  Jae-in SIM ,  Seung-woo CHOI

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Abstract translation: 发光装置包括：基板; 在所述基板上包括第一和第二氮化物基半导体层的发光结构以及所述第一和第二氮化物基半导体层之间的有源层; 在所述发光结构的顶表面上的绝缘层; 绝缘层上的突起，突起的顶表面大于其底表面，所述突起具有梯形横截面; 覆盖发光结构的顶面的透明导电层，绝缘层的上表面和突起的顶面，沿着发光结构的顶面具有恒定的厚度，顶表面 绝缘层和突起的顶表面; 以及覆盖透明导电层上的突起的至少一个倾斜表面的电极。