Invention Application
US20160163863A1 CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON A FINFET DEVICE
有权
用于在FINFET器件上形成通道区域的通道封装最近的处理流程
- Patent Title: CHANNEL CLADDING LAST PROCESS FLOW FOR FORMING A CHANNEL REGION ON A FINFET DEVICE
- Patent Title (中): 用于在FINFET器件上形成通道区域的通道封装最近的处理流程
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Application No.: US14560361Application Date: 2014-12-04
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Publication No.: US20160163863A1Publication Date: 2016-06-09
- Inventor: Ajey Poovannummoottil Jacob , Witold P. Maszara , Jody A. Fronheiser
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/201 ; H01L21/02 ; H01L29/161 ; H01L29/66 ; H01L21/3213
Abstract:
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming an initial epi semiconductor cladding material around the exposed portion of a fin for an entire axial length of the fin, forming a sacrificial gate structure around a portion of the fin and the initial cladding material, removing the sacrificial gate structure so as to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to remove at least the exposed portion of the initial cladding material and thereby expose a surface of the fin within the replacement gate cavity, forming at least one replacement epi semiconductor cladding material around the exposed surface of the fin, and forming a replacement gate structure within the replacement gate cavity around the at least one replacement epi semiconductor cladding material.
Public/Granted literature
- US09362405B1 Channel cladding last process flow for forming a channel region on a FinFET device Public/Granted day:2016-06-07
Information query
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