Invention Application
US20160163906A1 AVALANCHE PHOTODIODE OPERATING IN GEIGER MODE INCLUDING A STRUCTURE FOR ELECTRO-OPTICAL CONFINEMENT FOR CROSSTALK REDUCTION, AND ARRAY OF PHOTODIODES
审中-公开
AVALANCHE光电工作在GEIGER模式下运行，包括用于减少CROSSTALK的电光学配置结构和光电子阵列
- Patent Title: AVALANCHE PHOTODIODE OPERATING IN GEIGER MODE INCLUDING A STRUCTURE FOR ELECTRO-OPTICAL CONFINEMENT FOR CROSSTALK REDUCTION, AND ARRAY OF PHOTODIODES
- Patent Title (中): AVALANCHE光电工作在GEIGER模式下运行，包括用于减少CROSSTALK的电光学配置结构和光电子阵列
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Application No.: US15045384Application Date: 2016-02-17
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Publication No.: US20160163906A1Publication Date: 2016-06-09
- Inventor: Anna Muscara' , Massimo Cataldo Mazzillo
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Priority: ITTO2013A000398 20130516
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L27/144 ; H01L31/0232
Abstract:
An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.
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