Invention Application
- Patent Title: Contact Critical Dimension Control
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Application No.: US15047809Application Date: 2016-02-19
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Publication No.: US20160172303A1Publication Date: 2016-06-16
- Inventor: Tain-Shang Chang , Chia-Han Lai , Ren-Hau Yu , Ching-Yao Sun , Yu-Sheng Wang
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Main IPC: H01L23/532
- IPC: H01L23/532
Abstract:
In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
Public/Granted literature
- US09449922B2 Contact critical dimension control Public/Granted day:2016-09-20
Information query
IPC分类:
