公开(公告)号：US20160172303A1

公开(公告)日：2016-06-16

申请号：US15047809

申请日：2016-02-19

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Tain-Shang Chang ,  Chia-Han Lai ,  Ren-Hau Yu ,  Ching-Yao Sun ,  Yu-Sheng Wang

IPC: H01L23/532

CPC classification number: H01L23/53209 ,  H01L21/28518 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76879 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.

公开(公告)号：US09449922B2

公开(公告)日：2016-09-20

申请号：US15047809

申请日：2016-02-19

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Tain-Shang Chang ,  Chia-Han Lai ,  Ren-Hau Yu ,  Ching-Yao Sun ,  Yu-Sheng Wang

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L23/532 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/285

CPC classification number: H01L23/53209 ,  H01L21/28518 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76879 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.

Abstract translation: 在半导体器件的制造方法中，在基板上形成电介质层，并且从电介质层向基板形成接触孔。 介电隔离衬垫被形成以覆盖接触孔的侧壁和底部。 去除介电隔离衬垫的一部分以露出衬底的一部分。 通过接触孔将金属硅化物层形成到衬底中。

公开(公告)号：US09299607B2

公开(公告)日：2016-03-29

申请号：US14179671

申请日：2014-02-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Tain-Shang Chang ,  Chia-Han Lai ,  Ren-Hau Yu ,  Ching-Yao Sun ,  Yu-Sheng Wang

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/311

CPC classification number: H01L23/53209 ,  H01L21/28518 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76879 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.

公开(公告)号：US20150228537A1

公开(公告)日：2015-08-13

申请号：US14179671

申请日：2014-02-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Tain-Shang Chang ,  Chia-Han Lai ,  Ren-Hau Yu ,  Ching-Yao Sun ,  Yu-Sheng Wang

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L23/53209 ,  H01L21/28518 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76879 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.

Abstract translation: 在半导体器件的制造方法中，在基板上形成电介质层，并且从电介质层向基板形成接触孔。 介电隔离衬垫被形成以覆盖接触孔的侧壁和底部。 去除介电隔离衬垫的一部分以露出衬底的一部分。 通过接触孔将金属硅化物层形成到衬底中。