Invention Application
- Patent Title: Semiconductor Device and Method for Manufacturing the Same
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Application No.: US14944444Application Date: 2015-11-18
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Publication No.: US20160172382A1Publication Date: 2016-06-16
- Inventor: Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Priority: JP11-076992 19990323
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1368 ; H01L27/32
Abstract:
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
Public/Granted literature
- US09806096B2 Semiconductor device and method for manufacturing the same Public/Granted day:2017-10-31
Information query
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