Invention Application
- Patent Title: FINFET TRANSISTOR WITH EPITAXIAL STRUCTURES
- Patent Title (中): 具有外延结构的FINFET晶体管
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Application No.: US14599556Application Date: 2015-01-19
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Publication No.: US20160172496A1Publication Date: 2016-06-16
- Inventor: Chung-Fu Chang , Chun-Hsien Lin , Chen-Yi Weng
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: TW103143557 20141212
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A field effect transistor with epitaxial structures includes a fin-shaped structure and a metal gate across the fin-shaped structure. The metal gate includes a pair of recess regions disposed on two sides of the bottom of the metal gate.
Public/Granted literature
- US09666715B2 FinFET transistor with epitaxial structures Public/Granted day:2017-05-30
Information query
IPC分类:
