发明申请
US20160181221A1 Semiconductor Module 有权
半导体模块

  • 专利标题: Semiconductor Module
  • 专利标题(中): 半导体模块
  • 申请号: US14910355
    申请日: 2014-10-06
  • 公开(公告)号: US20160181221A1
    公开(公告)日: 2016-06-23
  • 发明人: Takashi SUNAGANoboru KANEKOOsamu MIYOSHIRyoichi SUZUKI
  • 申请人: NSK LTD.
  • 优先权: JP2013-218433 20131021; JP2013-228391 20131101; JP2014-032022 20140221; JP2014-090389 20140424; JP2014-091665 20140425; JP2014-104799 20140521; JP2014-124853 20140618
  • 国际申请: PCT/JP2014/005085 WO 20141006
  • 主分类号: H01L23/00
  • IPC分类号: H01L23/00 H01L23/498 H01L23/492 H01L29/78 H01L29/739
Semiconductor Module
摘要:
To provide a semiconductor module that has high reliability of electric connection by a solder and is inexpensive. A joint surface of an electrode jointing portion that is opposed to a surface to be jointed of a gate electrode of a bare-chip FET and a joint surface of a substrate jointing portion that is opposed to a surface to be jointed of another wiring pattern include an outgas releasing mechanism that makes outgas generated from a molten solder during solder jointing of a metal plate connector be released from solders interposed between the joint surfaces and the surfaces to be jointed.
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