Invention Application
US20160190253A1 METHOD AND STRUCTURE OF MAKING ENHANCED UTBB FDSOI DEVICES
审中-公开
制造增强型UTBB FDSOI器件的方法和结构
- Patent Title: METHOD AND STRUCTURE OF MAKING ENHANCED UTBB FDSOI DEVICES
- Patent Title (中): 制造增强型UTBB FDSOI器件的方法和结构
-
Application No.: US14942566Application Date: 2015-11-16
-
Publication No.: US20160190253A1Publication Date: 2016-06-30
- Inventor: Qing LIU , Thomas SKOTNICKI
- Applicant: STMICROELECTRONICS, INC. , STMICROELECTRONICS (CROLLES 2) SAS
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/08 ; H01L29/06 ; H01L29/66 ; H01L29/78
Abstract:
An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material.
Public/Granted literature
- US09543436B2 Method and structure of making enhanced UTBB FDSOI devices Public/Granted day:2017-01-10
Information query
IPC分类:
