Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US15065762Application Date: 2016-03-09
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Publication No.: US20160190930A1Publication Date: 2016-06-30
- Inventor: Ryohei Nega , Yoshinao Miura
- Applicant: Renesas Electronics Corporation
- Priority: JP2012-233481 20121023
- Main IPC: H02M3/158
- IPC: H02M3/158 ; H01L23/498 ; H01L29/205

Abstract:
Provided is a semiconductor device including: a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.
Public/Granted literature
- US09667147B2 Semiconductor device with DC/DC converter circuit Public/Granted day:2017-05-30
Information query
IPC分类: