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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10135337B2

    公开(公告)日：2018-11-20

    申请号：US15491875

    申请日：2017-04-19

    Applicant: Renesas Electronics Corporation

    Inventor： Ryohei Nega ,  Yoshinao Miura

    IPC: H01L29/778 ,  H02M3/158 ,  H02M1/34 ,  H01L29/205 ,  H01L23/498 ,  H01L29/20 ,  H01L29/423

    Abstract: Provided is a semiconductor device including a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160133715A1

    公开(公告)日：2016-05-12

    申请号：US14982541

    申请日：2015-12-29

    Applicant: Renesas Electronics Corporation

    Inventor： Yasuhiro Okamoto ,  Takashi Inoue ,  Tatsuo Nakayama ,  Ryohei Nega ,  Masaaki Kanazawa ,  Hironobu Miyamoto

    IPC: H01L29/45 ,  H01L29/205 ,  H01L29/778 ,  H01L29/20

    CPC classification number: H01L29/452 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The reliability of a field effect transistor made of a nitride semiconductor material is improved. An ohmic electrode includes a plurality of unit electrodes isolated to be separated from each other. With this configuration, an on-state current can be prevented from flowing in the unit electrodes in a y-axial direction (negative direction). Further, in the respective unit electrodes, a current density of the on-state current flowing in the y-axial direction (negative direction) can be prevented from increasing. As a result, an electromigration resistance of the ohmic electrode can be improved.

    Abstract translation: 提高了由氮化物半导体材料制成的场效应晶体管的可靠性。 欧姆电极包括被隔离以彼此分离的多个单元电极。 由此，能够防止在y轴方向（负方向）在单位电极中流通导通电流。 此外，在各单元电极中，可以防止沿y轴方向（负方向）流动的通态电流的电流密度增加。 结果，可以提高欧姆电极的电迁移电阻。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09536978B2

    公开(公告)日：2017-01-03

    申请号：US14198430

    申请日：2014-03-05

    Applicant: Renesas Electronics Corporation

    Inventor： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yasuhiro Okamoto ,  Ryohei Nega ,  Masaaki Kanazawa ,  Takashi Inoue

    IPC: H01L29/778 ,  H01L29/66 ,  H01L29/15 ,  H01L29/20

    CPC classification number: H01L29/66462 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7787

    Abstract: To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer. That is, the concentration of acceptors introduced into the nitride semiconductor layers having a small band gap is higher than the concentration of acceptors introduced into the nitride semiconductor layers having a large band gap.

    Abstract translation: 提高半导体器件的性能。 例如，假设超晶格层被插入在缓冲层和沟道层之间，则导入形成超晶格层的一部分的氮化物半导体层中的受主的浓度高于形成氮化物半导体层的受主的浓度 超晶格层的另一部分。 也就是说，导入具有小带隙的氮化物半导体层的受主的浓度高于导入具有大带隙的氮化物半导体层的受主的浓度。

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