发明申请
US20160196866A1 FAST EXIT FROM DRAM SELF-REFRESH 有权
快速退出DRAM自我修复

  • 专利标题: FAST EXIT FROM DRAM SELF-REFRESH
  • 专利标题(中): 快速退出DRAM自我修复
  • 申请号: US15068925
    申请日: 2016-03-14
  • 公开(公告)号: US20160196866A1
    公开(公告)日: 2016-07-07
  • 发明人: Kuljit S Bains
  • 申请人: INTEL CORPORATION
  • 主分类号: G11C11/406
  • IPC分类号: G11C11/406
FAST EXIT FROM DRAM SELF-REFRESH
摘要:
Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.
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