发明申请
- 专利标题: FAST EXIT FROM DRAM SELF-REFRESH
- 专利标题(中): 快速退出DRAM自我修复
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申请号: US15068925申请日: 2016-03-14
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公开(公告)号: US20160196866A1公开(公告)日: 2016-07-07
- 发明人: Kuljit S Bains
- 申请人: INTEL CORPORATION
- 主分类号: G11C11/406
- IPC分类号: G11C11/406
摘要:
Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.
公开/授权文献
- US09953693B2 Fast exit from DRAM self-refresh 公开/授权日:2018-04-24
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