Invention Application
US20160202208A1 MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR
审中-公开
双门敏感场效应晶体管传感器多重检测系统
- Patent Title: MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR
- Patent Title (中): 双门敏感场效应晶体管传感器多重检测系统
-
Application No.: US14925172Application Date: 2015-10-28
-
Publication No.: US20160202208A1Publication Date: 2016-07-14
- Inventor: Kwan Hyi LEE , Seok LEE , Minhong JEUN , Inkyu LEE , Jung Hoon PARK , Won-Ju CHO , Hyun-June JANG
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Priority: KR10-2015-0007017 20150114
- Main IPC: G01N27/414
- IPC: G01N27/414

Abstract:
A multiplexing detection system of a dual gate ion-sensitive field effect transistor bio sensor of the present invention includes: a first dual gate ion-sensitive field effect transistor bio sensor; and a second dual gate ion-sensitive field effect transistor bio sensor, wherein a first bio signal is sensed through the first dual gate ion-sensitive field effect transistor bio sensor, and a second bio signal is sensed through the second dual gate ion-sensitive field effect transistor bio sensor, and the first bio signal and the second bio signal are different in type from each other.
Information query