MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR
    2.
    发明申请
    MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR 审中-公开
    双门敏感场效应晶体管传感器多重检测系统

    公开(公告)号:US20160202208A1

    公开(公告)日:2016-07-14

    申请号:US14925172

    申请日:2015-10-28

    CPC classification number: G01N27/4145

    Abstract: A multiplexing detection system of a dual gate ion-sensitive field effect transistor bio sensor of the present invention includes: a first dual gate ion-sensitive field effect transistor bio sensor; and a second dual gate ion-sensitive field effect transistor bio sensor, wherein a first bio signal is sensed through the first dual gate ion-sensitive field effect transistor bio sensor, and a second bio signal is sensed through the second dual gate ion-sensitive field effect transistor bio sensor, and the first bio signal and the second bio signal are different in type from each other.

    Abstract translation: 本发明的双栅离子敏感场效应晶体管生物传感器的复用检测系统包括:第一双栅极离子敏感场效应晶体管生物传感器; 以及第二双栅极离子敏感场效应晶体管生物传感器,其中通过第一双栅离子敏感场效应晶体管生物传感器感测第一生物信号,并且通过第二双栅离子敏感感测第二生物信号 场效应晶体管生物传感器,第一生物信号和第二生物信号的类型彼此不同。

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