Invention Application
US20160204219A1 SEMICONDUCTOR DEVICE COMPRISING FERROELECTRIC ELEMENTS AND FAST HIGH-K METAL GATE TRANSISTORS
有权
包含电磁元件和快速高K金属栅极晶体管的半导体器件
- Patent Title: SEMICONDUCTOR DEVICE COMPRISING FERROELECTRIC ELEMENTS AND FAST HIGH-K METAL GATE TRANSISTORS
- Patent Title (中): 包含电磁元件和快速高K金属栅极晶体管的半导体器件
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Application No.: US15076850Application Date: 2016-03-22
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Publication No.: US20160204219A1Publication Date: 2016-07-14
- Inventor: Till Schloesser , Peter Baars
- Applicant: GLOBALFOUNDRIES Inc.
- Priority: DE102012205977.6 20120412
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/78
Abstract:
A semiconductor device comprises a first and second circuit element. The first circuit element comprises a first electrode structure including a first high-k dielectric layer, the first high-k dielectric layer having a first thickness and comprising hafnium. The second circuit element comprises a second electrode structure that includes a second high-k dielectric layer having a ferroelectric behavior, wherein the second high-k dielectric layer has a second thickness and comprises hafnium, and wherein the second thickness is greater than the first thickness.
Public/Granted literature
- US09564521B2 Semiconductor device comprising ferroelectric elements and fast high-K metal gate transistors Public/Granted day:2017-02-07
Information query
IPC分类:
