Invention Application
US20160207763A1 METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE
有权
在MEMS器件中形成平面非晶材料的方法
- Patent Title: METHOD OF FORMING PLANAR SACRIFICIAL MATERIAL IN A MEMS DEVICE
- Patent Title (中): 在MEMS器件中形成平面非晶材料的方法
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Application No.: US14914504Application Date: 2014-09-02
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Publication No.: US20160207763A1Publication Date: 2016-07-21
- Inventor: Brian I. TROY , James F. BOBEY , Mickael RENAULT , Joseph Damian Gordon LACEY , Thomas L. MAGUIRE
- Applicant: CAVENDISH KINETICS, INC.
- Applicant Address: US CA San Jose
- Assignee: CAVENDISH KINETICS, INC.
- Current Assignee: CAVENDISH KINETICS, INC.
- Current Assignee Address: US CA San Jose
- International Application: PCT/US2014/053659 WO 20140902
- Main IPC: B81C1/00
- IPC: B81C1/00 ; H01G5/16

Abstract:
The present invention generally relates to a method of fabricating a MEMS device. In the MEMS device, a movable plate is disposed within a cavity such that the movable plate is movable within the cavity. To form the cavity, sacrificial material may be deposited and then the material of the movable plate is deposited thereover. The sacrificial material is removed to free the mov able plate to move within the cavity. The sacrificial material, once deposited, may not be sufficiently planar because the height difference between the lowest point and the highest point of the sacrificial material may be quite high. To ensure the movable plate is sufficiently planar, the planarity of the sacrificial material should be maximized. To maximize the surface planarity of the sacrificial material, the sacrificial material may be deposited and then conductive heated to permit the sacrificial material to reflow and thus, be planarized.
Public/Granted literature
- US09487395B2 Method of forming planar sacrificial material in a MEMS device Public/Granted day:2016-11-08
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