Invention Application
- Patent Title: Semiconductor Device
- Patent Title (中): 半导体器件
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Application No.: US14967463Application Date: 2015-12-14
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Publication No.: US20160218083A1Publication Date: 2016-07-28
- Inventor: Shuuichi KARIYAZAKI , Wataru SHIROI , Ryuichi OIKAWA , Kenichi KUBOYAMA
- Applicant: Renesas Electronics Corporation
- Priority: JP2015-012482 20150126
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/498

Abstract:
To improve reliability of signal transmission of an interposer which couples between semiconductor chips. A reference potential wiring and a reference potential wiring are provided on both neighboring sides of a signal wiring provided in a first wiring layer of an interposer. Also, a reference potential wiring and a reference potential wiring are provided on both neighboring sides of a signal wiring provided in a second wiring layer of the interposer. Further, the signal wiring and the signal wiring cross each other in plan view. The reference potential wirings of the first wiring layer, and the reference potential wirings of the second wiring layer are coupled to each other at the periphery of their crossing portion.
Public/Granted literature
- US09461016B2 Semiconductor device Public/Granted day:2016-10-04
Information query
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