发明申请
- 专利标题： Metal oxynitride transistor devices
- 专利标题（中）： 金属氮氧化物晶体管器件
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申请号： US14544652申请日： 2015-01-30
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公开(公告)号： US20160225915A1公开(公告)日： 2016-08-04
- 发明人: Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
- 申请人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/49 ; H01L29/423 ; H01L29/24
摘要：
Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.
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IPC分类:
