Invention Application
- Patent Title: MEMORY DEVICE AND OPERATING METHOD OF SAME
- Patent Title (中): 存储器件及其操作方法
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Application No.: US14619810Application Date: 2015-02-11
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Publication No.: US20160232950A1Publication Date: 2016-08-11
- Inventor: Kuen-Long CHANG , Ken-Hui CHEN , Ming-Chih HSIEH
- Applicant: Macronix International Co., Ltd.
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory device includes a memory array and a logic unit communicatively coupled to the memory array. The memory array includes a plurality of pages for storing array data and a plurality of extra arrays respectively corresponding to the plurality of pages for storing extra data. The logic unit is configured to receive a read instruction, and perform a read operation in a first access mode or in a second access mode. In the first access mode, the logic unit sequentially reads out the array data stored in the plurality of pages. In the second access mode, the logic unit sequentially reads out the array data stored in the plurality of pages and the extra data stored in the plurality of extra arrays.
Public/Granted literature
- US09396769B1 Memory device and operating method of same Public/Granted day:2016-07-19
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