Invention Application
- Patent Title: METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 形成绝缘膜的方法和制造半导体器件的方法
-
Application No.: US15043242Application Date: 2016-02-12
-
Publication No.: US20160240374A1Publication Date: 2016-08-18
- Inventor: Shigeru KASAI , Kotaro MIYATANI , Takuya KUROTORI , Kenichi KOTE , Yutaka FUJINO , Akira TANIHARA , Kohei KAWAMURA
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2015-026315 20150213
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.
Public/Granted literature
- US09640388B2 Method for forming insulating film and method for manufacturing semiconductor device Public/Granted day:2017-05-02
Information query
IPC分类:
