公开(公告)号：US20160240374A1

公开(公告)日：2016-08-18

申请号：US15043242

申请日：2016-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru KASAI ,  Kotaro MIYATANI ,  Takuya KUROTORI ,  Kenichi KOTE ,  Yutaka FUJINO ,  Akira TANIHARA ,  Kohei KAWAMURA

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02315

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract translation: 在与金属接触的氟碳系绝缘膜的形成方法中，在含氢气氛中对附着有水分的金属照射微波。 然后，对照射微波的金属进行基于碳氟化合物气体的等离子体CVD，形成绝缘膜。

公开(公告)号：US20160020135A1

公开(公告)日：2016-01-21

申请号：US14854226

申请日：2015-09-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei KAWAMURA ,  Yasuo KOBAYASHI ,  Toshihisa NOZAWA ,  Kiyotaka ISHIBASHI

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract translation: 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。