发明申请
US20160240626A1 Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
有权
全方位垂直门（VGAA）设备及其制造方法
- 专利标题： Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
- 专利标题（中）： 全方位垂直门（VGAA）设备及其制造方法
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申请号： US14660542申请日： 2015-03-17
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公开(公告)号： US20160240626A1公开(公告)日： 2016-08-18
- 发明人: Chia-Hao Chang , Ming-Shan Shieh , Cheng-Long Chen , Chin-Chi Wang , Chi-Wen Liu , Wai-Yi Lien , Chih-Hao Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/66 ; H01L21/8238 ; H01L29/78 ; H01L21/283 ; H01L21/02
摘要：
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.
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