发明申请
- 专利标题: EPITAXIAL WAFER AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 外延波形及其制造方法
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申请号: US15138526申请日: 2016-04-26
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公开(公告)号: US20160240677A1公开(公告)日: 2016-08-18
- 发明人: Toshiaki ONO , Yumi HOSHINO
- 申请人: SUMCO CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: SUMCO CORPORATION
- 当前专利权人: SUMCO CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-318897 20081215
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/66 ; H01L29/161 ; H01L29/165 ; H01L29/08 ; H01L29/16
摘要:
A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).
公开/授权文献
- US09991386B2 Epitaxial wafer and method of manufacturing the same 公开/授权日:2018-06-05