发明申请
- 专利标题: QUALITY EVALUATION METHOD FOR SILICON WAFER, AND SILICON WAFER AND METHOD OF PRODUCING SILICON WAFER USING THE METHOD
- 专利标题(中): 用于硅波的质量评估方法和硅波以及使用该方法生产硅波的方法
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申请号: US15052235申请日: 2016-02-24
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公开(公告)号: US20160247694A1公开(公告)日: 2016-08-25
- 发明人: Jun FUJISE , Toshiaki ONO
- 申请人: SUMCO CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: SUMCO CORPORATION
- 当前专利权人: SUMCO CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2015-035646 20150225
- 主分类号: H01L21/322
- IPC分类号: H01L21/322 ; H01L29/16 ; C30B29/06 ; G01N3/24 ; C30B15/00 ; C30B13/00 ; H01L21/66 ; H01L29/32
摘要:
After determining the size of oxygen precipitates and the residual oxygen concentration in a silicon wafer after heat treatment performed in a device fabrication process; the critical shear stress τcri at which slip dislocations are formed in the silicon wafer in the device fabrication process is determined based on the obtained size of the oxygen precipitates and residual oxygen concentration; and the obtained critical shear stress τcri and the thermal stress τ applied to the silicon wafer in the heat treatment of the device fabrication process are compared, thereby determining that slip dislocations are formed in the silicon wafer in the device fabrication process when the thermal stress τ is equal to or more than the critical shear stress τcri, or determining that slip dislocations are not formed in the silicon wafer in the device fabrication process when the thermal stress τ is less than the critical shear stress τcri.