公开(公告)号：US11739435B2

公开(公告)日：2023-08-29

申请号：US17610871

申请日：2021-02-12

申请人： Crystal Systems Corporation

发明人： Isamu Shindo

IPC分类号： C30B13/22 ,  C30B13/00 ,  C30B13/32 ,  C30B15/16 ,  C30B29/12

CPC分类号： C30B13/005 ,  C30B13/22 ,  C30B13/32 ,  C30B15/16 ,  C30B29/12

摘要： [Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.
[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

公开(公告)号：US11730857B2

公开(公告)日：2023-08-22

申请号：US17195997

申请日：2021-03-09

申请人： University of Cincinnati

发明人： Vesselin N. Shanov ,  Vibhor Chaswal ,  Pravahan Salunke ,  Madhura Joshi ,  Guangqi Zhang ,  Mark J. Schulz ,  Sergey N. Yarmolenko ,  Doug Nienaber

IPC分类号： C30B11/00 ,  C30B15/00 ,  A61L27/04 ,  A61L27/50 ,  A61L31/02 ,  A61L31/14 ,  A61B17/80 ,  A61B17/86 ,  C30B29/02 ,  C30B13/00 ,  A61L27/58 ,  C30B25/00 ,  C30B23/00 ,  A61F2/30 ,  C25D11/30 ,  C30B11/02 ,  C30B33/00 ,  A61B17/00 ,  A61F2/08

CPC分类号： A61L27/047 ,  A61B17/80 ,  A61B17/86 ,  A61F2/3099 ,  A61L27/58 ,  A61L31/02 ,  A61L31/022 ,  A61L31/148 ,  C25D11/30 ,  C30B11/00 ,  C30B11/02 ,  C30B13/00 ,  C30B15/00 ,  C30B23/00 ,  C30B25/00 ,  C30B29/02 ,  C30B33/005 ,  A61B2017/00526 ,  A61F2002/0858

摘要： A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

公开(公告)号：US11007575B2

公开(公告)日：2021-05-18

申请号：US16139914

申请日：2018-09-24

申请人： SLM Solutions Group AG

发明人： Dieter Schwarze ,  Jiachun Chen

IPC分类号： B22F10/20 ,  C30B13/00 ,  B33Y50/02 ,  B33Y10/00 ,  B22F10/30 ,  C30B29/52 ,  B23P6/00 ,  F01D5/00 ,  B33Y30/00 ,  B33Y70/00 ,  B22F5/04

摘要： A method for producing or repairing a three-dimensional workpiece, the method including: depositing a sequence of layers of a raw material powder onto a substrate; after depositing a raw material powder layer, irradiating selected areas of the deposited raw material powder layer with an electromagnetic or particle radiation beam in a site selective manner in accordance with an irradiation pattern which corresponds to a geometry of at least part of a layer of the three-dimensional workpiece to be produced, the irradiation pattern including a scan pattern, wherein the substrate has a substantially single-crystalline microstructure; the irradiation is controlled so as to maintain the single-crystalline microstructure and to produce a metallurgical bond between sites of the raw material powder layer that are irradiated and the substrate and/or a previously deposited raw material powder layer, defining the scan pattern, so as to be one of a unidirectional or two directional scan pattern, rotating the scan pattern between two subsequently deposited raw material powder layers by a predetermined angle.

公开(公告)号：US10800659B2

公开(公告)日：2020-10-13

申请号：US15537968

申请日：2015-12-09

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Shuichi Miyao ,  Shigeyoshi Netsu ,  Junichi Okada

IPC分类号： C01B33/02 ,  C01B33/035 ,  C30B29/06 ,  C30B35/00 ,  C30B13/30 ,  G01N23/20 ,  G01N23/207 ,  C30B13/00

摘要： For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristics×amount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.

公开(公告)号：US10343922B2

公开(公告)日：2019-07-09

申请号：US15548569

申请日：2015-12-10

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Shuichi Miyao ,  Shigeyoshi Netsu

IPC分类号： C01B33/02 ,  C01B33/035 ,  G01N23/20 ,  C30B29/06 ,  C23C16/24 ,  C30B13/00 ,  C30B28/14

摘要： A plate-shaped sample with a cross-section perpendicular to a radial direction of a polycrystalline silicon rod as a principal surface is sampled from a region from a center (r=0) of the polycrystalline silicon rod to R/3. Then, the sample is disposed at a position at which a Bragg reflection from a (111) Miller index plane is detected. In-plane rotation with a rotational angle φ on the sample is performed with a center of the sample as a rotational center such that an X-ray irradiation region defined by a slit performs φ-scanning on the principal surface of the sample to obtain a diffraction chart indicating dependency of a Bragg reflection intensity from the (111) Miller index plane on a rotational angle of the sample. A ratio (Sp/St) between an area Sp of a peak part appearing in the diffraction chart and a total area St of the diffraction chart is calculated.

公开(公告)号：US10265764B2

公开(公告)日：2019-04-23

申请号：US15383384

申请日：2016-12-19

申请人： GENERAL ELECTRIC COMPANY

发明人： Jian Zheng ,  Arthur S. Peck

IPC分类号： F01D5/14 ,  B22D21/00 ,  B22D25/02 ,  B22D25/06 ,  B22D27/04 ,  C30B13/00 ,  C22C19/05 ,  C30B29/52

摘要： A casting method and cast article are provided. The casting method includes providing a casting furnace, the casting furnace including a withdrawal region in a lower end, positioning a mold within the casting furnace, positioning a molten material in the mold, partially withdrawing the mold a withdrawal distance through the withdrawal region in the casting furnace, the withdrawal distance providing a partially withdrawn portion, then reinserting at least a portion of the partially withdrawn portion into the casting furnace through the withdrawal region, and then completely withdrawing the mold from the casting furnace. The reinserting at least partially re-melts a solidified portion within the partially withdrawn portion to reduce or eliminate freckle grains. The cast article includes a microstructure and occurrence of freckle grains corresponding to being formed by a process comprising partially withdrawing, reinserting, and completely withdrawing of a mold from a casting furnace to form the cast article.

公开(公告)号：US09777393B2

公开(公告)日：2017-10-03

申请号：US14415980

申请日：2013-07-15

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Lamine Benaissa

IPC分类号： C30B13/00 ,  H01L21/02 ,  C30B13/24

CPC分类号： C30B13/005 ,  C30B13/24 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  Y10T428/12674

摘要： Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.

公开(公告)号：US09685515B2

公开(公告)日：2017-06-20

申请号：US14851210

申请日：2015-09-11

申请人： TAMURA CORPORATION

发明人： Kohei Sasaki

IPC分类号： H01L29/12 ,  H01L31/07 ,  H01L29/24 ,  C30B29/16 ,  H01L21/02 ,  C30B23/06 ,  C30B29/22 ,  C30B29/68 ,  H01L29/04 ,  C30B13/00 ,  C30B15/34

CPC分类号： H01L29/24 ,  C30B13/00 ,  C30B15/34 ,  C30B23/066 ,  C30B29/16 ,  C30B29/22 ,  C30B29/68 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045

摘要： A crystal laminate structure includes an epitaxial growth substrate including a β-Ga2O3-based single crystal and a (010) plane or a plane inclined at an angle not more than 37.5° with respect to the (010) plane as a main surface thereof and a high electrical resistance, and an epitaxial crystal formed on the main surface of the epitaxial growth substrate. The epitaxial crystal includes a Ga-containing oxide.

公开(公告)号：US09410263B2

公开(公告)日：2016-08-09

申请号：US13837047

申请日：2013-03-15

申请人： Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) ,  MITSUBISHI MATERIALS CORPORATION

发明人： Brian P. Smith ,  Christopher Cook

IPC分类号： C30B13/00 ,  C30B13/28

CPC分类号： C30B13/285 ,  Y10S117/911 ,  Y10T117/1076

摘要： The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.

摘要翻译： 根据本发明的装置是用于保持单晶硅种子的装置。 装置或保持器包含多个条以将晶种夹持在晶种保持器中; 以及支撑多个条的基座。 多个条带各自具有接触单晶硅晶种的自由端和与连接基底并与之成一体的自由端相反的端部。 多个条带被弯曲或折叠，使得当晶种插入多个条带中时，它们对晶种施加压力。

公开(公告)号：US09274069B2

公开(公告)日：2016-03-01

申请号：US14409202

申请日：2013-06-18

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B29/06 ,  G01N23/20 ,  C01B33/035 ,  C01B33/021 ,  C30B13/00 ,  C01B33/02 ,  C30B29/60 ,  G01N23/207

CPC分类号： G01N23/20 ,  C01B33/02 ,  C01B33/021 ,  C01B33/035 ,  C30B13/00 ,  C30B29/06 ,  C30B29/605 ,  G01N23/207 ,  G01N2223/3306 ,  G01N2223/606

摘要： When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face is detected and in-plane rotated at a rotational angle φ with the center of the disc-like sample 20 as the center of rotation, so that an X-ray-radiated region defined by a slit φ-scans over the principal surface of the disc-like sample 20, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face on the rotational angle (φ) of the disc-like sample 20, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.

摘要翻译： 当通过X射线衍射法评估多晶硅的结晶取向度时，将所获得的盘状样品20设置在从Miller折射面的布拉格反射被检测并且在 旋转角＆phgr 以盘状样品20的中心作为旋转中心，使得由狭缝＆phgr-定义的X射线辐射区域扫描在盘状样品20的主表面上，以确定表示 来自米勒指数面的布拉格反射强度对盘状样品20的旋转角度（＆phgr）的依赖性，从图表确定基线，并且使用基线的衍射强度值 作为结晶取向度的估计指标。