发明申请
- 专利标题： PHOTOVOLTAIC DEVICES WITH AN INTERFACIAL BAND-GAP MODIFYING STRUCTURE AND METHODS FOR FORMING THE SAME
- 专利标题（中）： 具有接口带隙修改结构的光电装置及其形成方法
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申请号： US15156940申请日： 2016-05-17
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公开(公告)号： US20160260859A1公开(公告)日： 2016-09-08
- 发明人: Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , George S. Tulevski , Ahmed Abou-Kandil , Hisham S. Mohamed , Mohamed Saad , Osama Tobail
- 申请人： International Business Machines Corporation , Egypt Nanotechnology Center
- 主分类号： H01L31/07
- IPC分类号： H01L31/07 ; H01L31/028 ; H01L31/056 ; H01L31/0224
摘要：
A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.
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