发明申请
- 专利标题： METHOD OF PROCESSING SINGLE-CRYSTAL SUBSTRATE
- 专利标题（中）： 单晶基板的加工方法
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申请号： US15068141申请日： 2016-03-11
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公开(公告)号： US20160268155A1公开(公告)日： 2016-09-15
- 发明人: Hiroshi Morikazu , Noboru Takeda , Takumi Shotokuji
- 申请人： DISCO CORPORATION
- 优先权： JP2015-049985 20150312
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; H01L21/78
摘要：
A method of dividing a single-crystal substrate along a plurality of preset division lines, includes a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, a protective member adhering step of adhering a protective member to the substrate before or after the shield tunnel forming step, and a grinding step of holding the protective member on the substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the substrate to bring the substrate to a predetermined thickness, and dividing the substrate along the division lines along which the shield tunnels have been formed.
公开/授权文献
- US09735040B2 Method of processing single-crystal substrate 公开/授权日：2017-08-15
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