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公开(公告)号：US09887140B2
公开(公告)日：2018-02-06
申请号：US15483120
申请日：2017-04-10
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Takumi Shotokuji
IPC分类号： H01L21/00 , H01L21/66 , H01L41/187 , H01L41/338 , H03H3/08 , H03H9/02
CPC分类号： H01L22/20 , H01L21/67092 , H01L21/681 , H01L21/78 , H01L41/1873 , H01L41/338 , H03H3/08 , H03H9/02535
摘要： There is provided a wafer processing method for dividing a wafer having a plurality of devices formed in regions partitioned by a plurality of crossing division lines on a front surface of a substrate having a birefringent crystal structure, into individual device chips. The wafer processing method includes a detection step of detecting the division line formed on the front surface of the wafer by an imaging unit from the back side of the wafer. In the detection step, a polarizer disposed on an optical axis connecting an imaging element and an image forming lens provided in the imaging unit intercepts extraordinary light appearing due to birefringence in the substrate and guides ordinary light to the imaging element.
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公开(公告)号：US20170370856A1
公开(公告)日：2017-12-28
申请号：US15629228
申请日：2017-06-21
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Hiroshi Morikazu
IPC分类号： G01N21/95 , H01L21/66 , G01N21/3563
CPC分类号： G01N21/9505 , G01B11/002 , G01B2210/48 , G01B2210/50 , G01N21/3563 , G01N21/9501 , G01N2021/3568 , G06T7/001 , H01L22/12
摘要： A method for detecting an internal crack in a wafer includes a first image recording step of applying near infrared light having a transmission wavelength to a reference wafer having the same configuration as a target wafer to be subjected to the detection of the internal crack, thereby obtaining a first image of the reference wafer having no internal crack and then recording the first image, a processing step of processing the target wafer, a second image recording step of applying the near infrared light to the target wafer, thereby obtaining a second image of the processed target wafer and then recording the second image, and an internal crack detecting step of removing the same image information between the first image and the second image from the second image to obtain a residual image, thereby detecting the residual image as the internal crack in the target wafer.
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公开(公告)号：US09812362B2
公开(公告)日：2017-11-07
申请号：US15450828
申请日：2017-03-06
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Hiroshi Morikazu
IPC分类号： H01L21/00 , H01L21/78 , H01L21/683
CPC分类号： H01L21/78 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： Disclosed herein is a wafer processing method including a cover plate providing step of providing a cover plate on the front side of a wafer to thereby form a composite wafer, a welding step of applying a laser beam along each division line formed on the front side of the wafer in the condition where the focal point of the laser beam is set at the interface between the wafer and the cover plate on opposite sides of the lateral center of each division line, thereby forming two parallel welded lines for joining the wafer and the cover plate along each division line, and a dividing step of forming a cut line between the two parallel welded lines formed along each division line, thereby cutting the composite wafer along each division line to obtain individual device chips each covered with the cover plate.
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公开(公告)号：US20170301592A1
公开(公告)日：2017-10-19
申请号：US15483120
申请日：2017-04-10
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Takumi Shotokuji
IPC分类号： H01L21/66 , H01L41/338 , H03H3/08 , H01L41/187 , H03H9/02
CPC分类号： H01L22/20 , H01L21/67092 , H01L21/681 , H01L21/78 , H01L41/1873 , H01L41/338 , H03H3/08 , H03H9/02535
摘要： There is provided a wafer processing method for dividing a wafer having a plurality of devices formed in regions partitioned by a plurality of crossing division lines on a front surface of a substrate having a birefringent crystal structure, into individual device chips. The wafer processing method includes a detection step of detecting the division line formed on the front surface of the wafer by an imaging unit from the back side of the wafer. In the detection step, a polarizer disposed on an optical axis connecting an imaging element and an image forming lens provided in the imaging unit intercepts extraordinary light appearing due to birefringence in the substrate and guides ordinary light to the imaging element.
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公开(公告)号：US20170243341A1
公开(公告)日：2017-08-24
申请号：US15440686
申请日：2017-02-23
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Hiroshi Morikazu
IPC分类号： G06T7/00 , H04N5/225 , G01N21/958
CPC分类号： G06T7/0004 , B23K26/032 , B23K26/53 , B23K2103/56 , G01N21/9501 , G01N21/958 , G01N2201/12 , G06T2207/10004 , G06T2207/30148 , H04N5/2256
摘要： Disclosed herein is an inspecting apparatus including an illuminating unit adapted to be positioned in the periphery of a transparent member for illuminating the transparent member from the outside of the circumference thereof, an imaging unit adapted to be opposed to the transparent member for imaging the transparent member illuminated by the illuminating unit, and a displaying monitor for displaying an image obtained by the imaging unit.
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公开(公告)号：US20150259235A1
公开(公告)日：2015-09-17
申请号：US14660146
申请日：2015-03-17
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Hiroshi Morikazu , Xiaoming Qiu , Fumiteru Tashino , Ken Togashi
CPC分类号： C03B33/0222 , B23K20/10 , B23K26/0006 , B23K26/03 , B23K26/0624 , B23K26/0853 , B23K26/364 , B23K26/384 , B23K26/53 , B23K2101/40 , B23K2103/52 , B65G2249/04 , C03B33/033 , C03B33/04
摘要： A plate-shaped object processing method forms a through hole of a desired shape in a plate-shaped object. The method includes a through hole contour forming step of performing laser processing within the plate-shaped object along a contour of the through hole to be formed, by positioning, within the plate-shaped object, a focal point of a pulsed laser beam of a wavelength capable of passing through the plate-shaped object. The beam is applied along the contour of the through hole to be formed by a pulsed laser beam irradiation unit including a condenser applying the laser beams. A through hole is formed by breaking the laser-processed contour of the through hole and forming the through hole by positioning an ultrasonic transducer of an ultrasonic wave applying unit in correspondence with the contour of the through hole to be formed, and applying an ultrasonic wave.
摘要翻译： 板形物体处理方法在板状物体中形成所需形状的通孔。 该方法包括通孔轮廓形成步骤，通过在板状物体内定位一个脉冲激光束的焦点，沿着待形成的通孔的轮廓在该板状物体内进行激光加工 能够穿过板状物体的波长。 沿着通孔的轮廓施加光束，该通孔由包括施加激光束的聚光器的脉冲激光束照射单元形成。 通过使通孔的激光加工轮廓断裂并形成通孔，通过将超声波施加单元的超声波换能器与要形成的通孔的轮廓相对应地形成通孔，并且施加超声波 。
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公开(公告)号：US20140256150A1
公开(公告)日：2014-09-11
申请号：US14188896
申请日：2014-02-25
申请人： Disco Corporation
发明人： Hiroshi Morikazu , Noboru Takeda
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/263
摘要： A wafer processing method for forming a via hole in a wafer. The wafer processing method includes a filament forming step of applying a pulsed laser beam to the wafer, the pulsed laser beam having a transmission wavelength to the wafer, in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area where the via hole is to be formed, thereby forming an amorphous filament inside the wafer in the subject area, and an etching step of etching the amorphous filament formed inside the wafer by using an etching agent to thereby form the via hole inside the wafer.
摘要翻译： 一种用于在晶片中形成通孔的晶片加工方法。 晶片处理方法包括：在脉冲激光束的焦点设置在晶片内部的状态下，向晶片施加脉冲激光束的脉冲激光束，脉冲激光束具有到晶片的透射波长 要形成通孔的对象区域，从而在该对象区域内形成晶片内部的非晶态长丝;以及蚀刻步骤，通过使用蚀刻剂蚀刻在晶片内部形成的非晶态长丝，从而在 晶圆。
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公开(公告)号：US10809201B2
公开(公告)日：2020-10-20
申请号：US16446215
申请日：2019-06-19
申请人： DISCO CORPORATION
摘要： A crystal orientation detecting apparatus for detecting a crystal orientation of a nonlinear optical crystal substrate includes a laser beam applying unit applying a linearly polarized laser beam to a surface of the nonlinear optical crystal substrate, a harmonic detecting unit detecting a harmonic produced from the nonlinear optical crystal substrate due to a nonlinear optical effect, a recording unit recording the relationship between the angular displacement through which the plane of polarization of the laser beam and the nonlinear optical crystal substrate are rotated relatively to each other, and the intensity of the harmonic, and a crystal orientation detecting unit detecting the crystal orientation of the nonlinear optical crystal substrate based on the recorded relationship.
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公开(公告)号：US10553490B2
公开(公告)日：2020-02-04
申请号：US15900247
申请日：2018-02-20
申请人： DISCO CORPORATION
发明人： Hiroshi Morikazu , Noboru Takeda
IPC分类号： H01L21/304 , H01L21/78 , H01L21/687 , G01N29/06
摘要： A processing method for a wafer including a crack detection step for irradiating illumination of a wavelength transparent to wafer, picking up an image of the wafer, and detecting whether a crack is generated within the wafer, a crack direction verification step for verifying, when a crack is detected, to which one of the first and second directions a direction in which the crack extends is nearer, a first cutting step for positioning the cutting blade to a scheduled division line of a direction decided to be a direction farther from the direction in which the crack extends from between the first and second directions and cutting the scheduled division line, and next a second cutting step for positioning the cutting blade to a scheduled division line of a direction decided to be nearer to the direction in which the crack extends and cutting the scheduled division line.
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公开(公告)号：US10119921B2
公开(公告)日：2018-11-06
申请号：US15629228
申请日：2017-06-21
申请人： DISCO CORPORATION
发明人： Noboru Takeda , Hiroshi Morikazu
IPC分类号： G01N21/95 , G01N21/3563 , H01L21/66
摘要： A method for detecting an internal crack in a wafer includes a first image recording step of applying near infrared light having a transmission wavelength to a reference wafer having the same configuration as a target wafer to be subjected to the detection of the internal crack, thereby obtaining a first image of the reference wafer having no internal crack and then recording the first image, a processing step of processing the target wafer, a second image recording step of applying the near infrared light to the target wafer, thereby obtaining a second image of the processed target wafer and then recording the second image, and an internal crack detecting step of removing the same image information between the first image and the second image from the second image to obtain a residual image, thereby detecting the residual image as the internal crack in the target wafer.
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