- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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申请号： US15163564申请日： 2016-05-24
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公开(公告)号： US20160268272A1公开(公告)日： 2016-09-15
- 发明人: Naoya Sashida
- 申请人： FUJITSU SEMICONDUCTOR LIMITED
- 优先权： JP2014-020552 20140205
- 主分类号： H01L27/115
- IPC分类号： H01L27/115
摘要：
An embodiment of a semiconductor device includes a plate line that is connected to ferroelectric capacitors selected from a plurality of ferroelectric capacitors and covers the selected ferroelectric capacitors and regions between the selected ferroelectric capacitors from above top electrodes.
公开/授权文献
- US09773794B2 Semiconductor device and method of manufacturing the same 公开/授权日：2017-09-26
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