Invention Application
- Patent Title: MEMS isolation structures
- Patent Title (中): MEMS隔离结构
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Application No.: US15166019Application Date: 2016-05-26
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Publication No.: US20160272485A1Publication Date: 2016-09-22
- Inventor: Ankur JAIN , Roman C. GUTIERREZ , Shi-Sheng LEE , Robert J. CALVET , Xiaolei LIU
- Applicant: DigitalOptics Corporation MEMS
- Main IPC: B81B7/00
- IPC: B81B7/00
Abstract:
A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.
Public/Granted literature
- US09783413B2 MEMS isolation structures Public/Granted day:2017-10-10
Information query
