公开(公告)号：US20170207678A1

公开(公告)日：2017-07-20

申请号：US15477284

申请日：2017-04-03

Applicant: DigitalOptics Corporation MEMS

Inventor： Roman C. GUTIERREZ ,  Robert J. CALVET ,  Xiaolei LIU ,  Ankur JAIN ,  Guiqin WANG

IPC: H02K5/24 ,  H02N1/00 ,  F16H49/00 ,  G03B13/34 ,  G03B5/00 ,  G02B7/00 ,  B81B3/00 ,  H04N5/225

CPC classification number: H02K5/24 ,  B81B3/0062 ,  B81B2203/058 ,  F16H49/00 ,  G02B7/005 ,  G02B26/0841 ,  G03B3/10 ,  G03B5/00 ,  G03B13/34 ,  G03B2205/0007 ,  G03B2205/0046 ,  G03B2205/0084 ,  H02N1/008 ,  H04N5/2257 ,  Y10T29/49826 ,  Y10T74/18056

Abstract: A device can have an outer frame and an actuator. The actuator can have a movable frame and a fixed frame. At least one torsional flexure and at least one hinge flexure can cooperate to provide comparatively high lateral stiffness between the outer frame and the movable frame and can cooperate to provide comparatively low rotational stiffness between the outer frame and the movable frame.

公开(公告)号：US20160272485A1

公开(公告)日：2016-09-22

申请号：US15166019

申请日：2016-05-26

Applicant: DigitalOptics Corporation MEMS

Inventor： Ankur JAIN ,  Roman C. GUTIERREZ ,  Shi-Sheng LEE ,  Robert J. CALVET ,  Xiaolei LIU

IPC: B81B7/00

CPC classification number: B81B7/0077 ,  B81B2201/031 ,  B81B2203/033 ,  B81C1/00571 ,  G03B3/10 ,  G03B2205/0061

Abstract: A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

Abstract translation: 器件可以包括由第一半导体材料形成的衬底和形成在衬底中的沟槽。 可以在沟槽中形成第二半导体材料。 第二半导体材料可以具有相对于彼此隔离并且相对于第一半导体材料隔离的第一和第二部分。

公开(公告)号：US20180029879A1

公开(公告)日：2018-02-01

申请号：US15728435

申请日：2017-10-09

Applicant: DigitalOptics Corporation MEMS

Inventor： Ankur JAIN ,  Roman C. GUTIERREZ ,  Shi-Sheng LEE ,  Robert J. CALVET ,  Xiaolei LIU

IPC: B81B7/00 ,  G03B3/10 ,  B81C1/00

CPC classification number: B81B7/0077 ,  B81B2201/031 ,  B81B2203/033 ,  B81C1/00571 ,  G03B3/10 ,  G03B2205/0061

Abstract: A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.