Invention Application
US20160276447A1 ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE 有权
ZENER二极管具有可调节的断开电压

ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE
Abstract:
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of the substrate, and positioned between a an anode region having a first conductivity type and a cathode region having a second conductivity type, the cathode region extending from the surface of the substrate. A first conducting region is configured to generate a first electric field perpendicular to the plane of the Zener diode junction upon application of a first voltage to the first conducting region, and a second conducting region is configured to generate a second electric field along the plane of the Zener diode junction upon application of a second voltage to the second conducting region.
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