Invention Application
- Patent Title: ZENER DIODE HAVING AN ADJUSTABLE BREAKDOWN VOLTAGE
- Patent Title (中): ZENER二极管具有可调节的断开电压
-
Application No.: US14963670Application Date: 2015-12-09
-
Publication No.: US20160276447A1Publication Date: 2016-09-22
- Inventor: Roberto Simola , Pascal Fornara
- Applicant: STMicroelectronics (Rousset) SAS
- Priority: FR1552290 20150319
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/06 ; H01L29/866

Abstract:
The present disclosure relates to a Zener diode including a Zener diode junction formed in a semiconductor substrate along a plane parallel to the surface of the substrate, and positioned between a an anode region having a first conductivity type and a cathode region having a second conductivity type, the cathode region extending from the surface of the substrate. A first conducting region is configured to generate a first electric field perpendicular to the plane of the Zener diode junction upon application of a first voltage to the first conducting region, and a second conducting region is configured to generate a second electric field along the plane of the Zener diode junction upon application of a second voltage to the second conducting region.
Public/Granted literature
- US09577053B2 Zener diode having an adjustable breakdown voltage Public/Granted day:2017-02-21
Information query
IPC分类: