Invention Application
- Patent Title: GROUND SYSTEM FOR HIGH VOLTAGE SEMICONDUCTOR VALVE
- Patent Title (中): 高压半导体阀门接地系统
-
Application No.: US15034268Application Date: 2013-11-05
-
Publication No.: US20160278192A1Publication Date: 2016-09-22
- Inventor: Björn SANDIN , Christer SJÖBERG , Erik DORÉ , Johannes GRAN HIRVIOJA
- Applicant: ABB TECHNOLOGY LTD
- Applicant Address: CH Zürich
- Assignee: ABB TECHNOLOGY LTD
- Current Assignee: ABB TECHNOLOGY LTD
- Current Assignee Address: CH Zürich
- International Application: PCT/EP2013/073017 WO 20131105
- Main IPC: H05F3/02
- IPC: H05F3/02 ; H02H9/02

Abstract:
A high voltage valve arrangement includes a high voltage valve unit; an external electric shield structure arranged at least partially around the high voltage modular valve unit and a grounding system. The grounding system includes a grounding system configured to be remotely extended from a retracted position to an extended position, whereby the extendable grounding device establishes electric connection with the external shield structure when it is extended from the retracted position.
Public/Granted literature
- US10064260B2 Ground system for high voltage semiconductor valve Public/Granted day:2018-08-28
Information query