Invention Application
US20160291462A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT
审中-公开
形成图案的图案形成方法和组合
- Patent Title: PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT
- Patent Title (中): 形成图案的图案形成方法和组合
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Application No.: US15082389Application Date: 2016-03-28
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Publication No.: US20160291462A1Publication Date: 2016-10-06
- Inventor: Kanako MEYA , Yusuke ANNO , Ken MARUYAMA , Shuto MORI
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2015-074644 20150331; JP2016-046167 20160309
- Main IPC: G03F7/00
- IPC: G03F7/00 ; H01L21/027 ; G03F7/40

Abstract:
A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.
Public/Granted literature
- US10216090B2 Pattern-forming method and composition for resist pattern-refinement Public/Granted day:2019-02-26
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