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公开(公告)号:US20240152050A1
公开(公告)日:2024-05-09
申请号:US18504594
申请日:2023-11-08
Applicant: JSR CORPORATION
Inventor: Ken MARUYAMA
IPC: G03F7/004 , C08F220/18 , G03F7/038 , G03F7/039
CPC classification number: G03F7/0045 , C08F220/1807 , C08F220/1808 , C08F220/1812 , C08F220/1818 , G03F7/038 , G03F7/039 , G03F7/162
Abstract: A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),
where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.-
公开(公告)号:US20240030030A1
公开(公告)日:2024-01-25
申请号:US18374041
申请日:2023-09-28
Applicant: JSR CORPORATION
Inventor: Ken MARUYAMA , Takayoshi ABE , Kazunori SAKAI
IPC: H01L21/027 , G03F7/004
CPC classification number: H01L21/0275 , G03F7/0047 , H01L21/32139
Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. A part of the exposed metal-containing resist film is volatilized to form a resist pattern.
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公开(公告)号:US20240021429A1
公开(公告)日:2024-01-18
申请号:US18372163
申请日:2023-09-25
Applicant: JSR CORPORATION
Inventor: Ken MARUYAMA , Takayoshi Abe , Kazunori Sakai
IPC: H01L21/027 , H01L21/311 , G03F7/16 , G03F7/004 , G03F7/20
CPC classification number: H01L21/0274 , H01L21/31116 , G03F7/167 , G03F7/0042 , G03F7/2004
Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition for forming a resist underlayer film. A metal-containing resist film is formed on the resist underlayer film. The metal-containing resist film is exposed. An exposed portion of the exposed metal-containing resist film is dissolved with a developer to form a resist pattern.
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公开(公告)号:US20230236506A2
公开(公告)日:2023-07-27
申请号:US17867739
申请日:2022-07-19
Applicant: JSR CORPORATION
Inventor: Katsuaki NISHIKORI , Kazuya KIRIYAMA , Takuhiro TANIGUCHI , Ken MARUYAMA
Abstract: A radiation-sensitive resin composition includes a polymer and a compound. The compound includes a first structural unit including an aromatic carbon ring to which no less than two hydroxy groups bond, and a second structural unit including an acid-labile group which is dissociable by an action of an acid to give a carboxy group. The compound is represented by formula (1). R1 represents a monovalent organic group having 1 to 30 carbon atoms; and X+ represents a monovalent radiation-sensitive onium cation. A weight average molecular weight of the polymer is no greater than 10,000.
R1—COO−X+ (1)-
公开(公告)号:US20240369928A1
公开(公告)日:2024-11-07
申请号:US18685539
申请日:2022-08-30
Applicant: JSR CORPORATION
Inventor: Ken MARUYAMA
Abstract: A radiation-sensitive resin composition includes a resin, an acid diffusion controlling agent represented by formula (a), and a solvent. The resin includes: at least one structural unit selected from the group consisting of a structural unit represented by formula (1) and a structural unit represented by formula (2); and a structural unit including a phenolic hydroxy group. Rw is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or an amino group; Lq is a divalent linking group; Z+ is a monovalent radiation-sensitive onium cation; q1 is an integer of 1 to 4; q2 is an integer of 0 to 3; q3 is an integer of 1 to 3; and an upper limit of q1+q2+q3 is 6.
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公开(公告)号:US20240126167A1
公开(公告)日:2024-04-18
申请号:US18270256
申请日:2021-11-15
Applicant: JSR CORPORATION
Inventor: Ken MARUYAMA
CPC classification number: G03F7/0045 , G03F7/038 , G03F7/039
Abstract: A radiation-sensitive composition includes: a polymer (A) including a structural unit represented by formula (i); and an acid-generating compound including a radiation-sensitive onium cation and an organic anion (provided that the polymer (A) is excluded), while satisfying at least one of requirements [K1] and [K2]. In [K1], the polymer (A) includes a radiation-sensitive onium cation [X] including two or more of substituents β each of which is at least one type selected from the group consisting of a fluoroalkyl group and a fluoro group (provided that the fluoro group in the fluoroalkyl group is excluded). In [K2], the acid-generating compound includes a compound including a radiation-sensitive onium cation [X].
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公开(公告)号:US20230341772A1
公开(公告)日:2023-10-26
申请号:US18215863
申请日:2023-06-29
Applicant: JSR CORPORATION
Inventor: Ken MARUYAMA
IPC: G03F7/004 , G03F7/039 , G03F7/16 , G03F7/40 , G03F7/20 , G03F7/38 , G03F7/32 , C07C309/24 , C07C309/06 , C07C381/12 , C07C309/12 , C07C309/19 , C07C303/32 , G03F7/30
CPC classification number: G03F7/0045 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/40 , G03F7/2041 , G03F7/38 , G03F7/327 , G03F7/2006 , G03F7/0046 , G03F7/0392 , C07C309/24 , C07C309/06 , C07C381/12 , C07C309/12 , C07C309/19 , C07C303/32 , G03F7/30
Abstract: A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).
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公开(公告)号:US20230203229A1
公开(公告)日:2023-06-29
申请号:US18108108
申请日:2023-02-10
Applicant: JSR CORPORATION
Inventor: Miki TAMADA , Ryo KUMEGAWA , Motohiro SHIRATANI , Hiroyuki KOMATSU , Ken MARUYAMA , Sosuke OSAWA
IPC: C08F297/02 , G03F7/00 , G03F7/075
CPC classification number: C08F297/026 , G03F7/0035 , G03F7/0757 , C08F2810/40
Abstract: A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R1 and R2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.
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公开(公告)号:US20210318613A9
公开(公告)日:2021-10-14
申请号:US16897326
申请日:2020-06-10
Applicant: JSR CORPORATION
Inventor: Katsuaki NISHIKORI , Ken MARUYAMA , Kazuki KASAHARA , Tsuyoshi FURUKAWA , Natsuko KINOSHITA
IPC: G03F7/039 , G03F7/004 , G03F7/038 , G03F7/16 , G03F7/20 , G03F7/32 , C08F212/14 , C08F220/18
Abstract: A radiation-sensitive resin composition includes a polymer, a radiation-sensitive acid generator, and a compound represented by formula (2). The polymer includes a first structural unit including a phenolic hydroxyl group, a second structural unit including a group represented by formula (1), and a third structural unit including an acid-labile group. In the formula (1), R1, R2, R3, R4, R5, and R6 each independently represent a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms, wherein at least one of R1, R2, R3, R4, R5, and R6 represents a fluorine atom or a fluorinated hydrocarbon group; RA represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to a part other than the group represented by the formula (1).
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公开(公告)号:US20200026188A1
公开(公告)日:2020-01-23
申请号:US16587271
申请日:2019-09-30
Applicant: JSR Corporation
Inventor: Ken MARUYAMA
IPC: G03F7/039 , G03F7/038 , G03F7/004 , C08F220/18
Abstract: A radiation-sensitive composition contains: a polymer having a first structural unit that includes an acid-labile group; a first compound that generates a first acid upon an irradiation with a radioactive ray; and a second compound that generates a second acid upon an irradiation with a radioactive ray. The first acid does not substantially dissociate the acid-labile group under a condition of a temperature of 110° C. and a time period of 1 min, and the second acid dissociates the acid-labile group under a condition of a temperature of 110° C. and a time period of 1 min. The radiation-sensitive composition satisfies at least one of requirements (1) and (2): (1) the polymer includes a monovalent iodine atom; and (2) the radiation-sensitive composition further contains a third compound that is other than the first compound or the second compound, and that includes a monovalent iodine atom.
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