Invention Application
- Patent Title: SELF-ALIGNED STRUCTURE
- Patent Title (中): 自对准结构
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Application No.: US14853670Application Date: 2015-09-14
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Publication No.: US20160293485A1Publication Date: 2016-10-06
- Inventor: Stanley Seungchul Song , Jeffrey Junhao Xu , Kern Rim , Da Yang , John Jianhong Zhu , Junjing Bao , Niladri Narayan Mojumder , Vladimir Machkaoutsan , Mustafa Badaroglu , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3213 ; H01L23/535 ; H01L27/088 ; H01L21/8234
Abstract:
A fin-type semiconductor device includes a gate structure and a source/drain structure. The fin-type semiconductor device also includes a gate hardmask structure coupled to the gate structure. The gate hardmask structure comprises a first material. The fin-type semiconductor device further includes a source/drain hardmask structure coupled to the source/drain structure. The source/drain hardmask structure comprises a second material.
Public/Granted literature
- US09799560B2 Self-aligned structure Public/Granted day:2017-10-24
Information query
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