发明申请
- 专利标题： NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS
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申请号： US15178391申请日： 2016-06-09
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公开(公告)号： US20160293774A1公开(公告)日： 2016-10-06
- 发明人: Han Wui Then , Sansaptak Dasgupta , Marko Radosavljevic , Benjamin Chu-Kung , Seung Hoon Sung , Sanaz K. Gardner , Robert S. Chau
- 申请人： Intel Corporation
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/06 ; H01L29/66 ; H01L29/205 ; H01L29/423 ; H01L29/04 ; H01L29/20
摘要：
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage.
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