Invention Application
US20160308072A1 SEMICONDUCTOR DEVICE HAVING EDGE TERMINATION STRUCTURE INCLUDING HIGH-CONCENTRATION REGION AND LOW-CONCENTRATION REGION
审中-公开
具有边缘终止结构的半导体器件，包括高浓度区域和低浓度区域
- Patent Title: SEMICONDUCTOR DEVICE HAVING EDGE TERMINATION STRUCTURE INCLUDING HIGH-CONCENTRATION REGION AND LOW-CONCENTRATION REGION
- Patent Title (中): 具有边缘终止结构的半导体器件，包括高浓度区域和低浓度区域
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Application No.: US15089383Application Date: 2016-04-01
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Publication No.: US20160308072A1Publication Date: 2016-10-20
- Inventor: MASAO UCHIDA , KOUICHI SAITOU , TAKAYUKI WAKAYAMA , MASASHI HAYASHI , TATSUYA KUNISATO
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Priority: JP2015-083369 20150415
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/06 ; H01L29/16
Abstract:
A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface of the semiconductor substrate, a guard ring region having a second conductivity type and disposed within the silicon carbide semiconductor layer, a floating region having the second conductivity type and disposed within the silicon carbide semiconductor layer, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface of the semiconductor substrate, wherein the guard ring region and the floating region each include a pair of a high-concentration region having the second conductivity type and a low-concentration region having the second conductivity type.
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