METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING A COMPOSITION FOR REMOVING PHOTORESIST AND METHODS OF REMOVING PHOTORESIST FROM A SEMICONDUCTOR SUBSTRATE

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US20160315019A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING A COMPOSITION FOR REMOVING PHOTORESIST AND METHODS OF REMOVING PHOTORESIST FROM A SEMICONDUCTOR SUBSTRATE 有权

Title translation: 使用组合物制造光电转换器的半导体器件的制造方法和从半导体衬底去除光电离器的方法

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Patent Title: METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING A COMPOSITION FOR REMOVING PHOTORESIST AND METHODS OF REMOVING PHOTORESIST FROM A SEMICONDUCTOR SUBSTRATE
Patent Title (中): 使用组合物制造光电转换器的半导体器件的制造方法和从半导体衬底去除光电离器的方法
Application No.: US15084536

Application Date: 2016-03-30
Publication No.: US20160315019A1

Publication Date: 2016-10-27
Inventor: Jung-Min OH , Mi-Hyun PARK , Hyo-San LEE , Ji-Hoon JEONG , Yong-Sun KO , In-Gi KIM , Na-Rim KIM , Sang-Tae KIM , Seong-Min KIM , Kyong-Ho LEE
Applicant: Jung-Min OH , Mi-Hyun PARK , Hyo-San LEE , Ji-Hoon JEONG , Yong-Sun KO , In-Gi KIM , Na-Rim KIM , Sang-Tae KIM , Seong-Min KIM , Kyong-Ho LEE
Priority: KR10-2015-0059184 20150427
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/027 ; H01L21/8234 ; H01L29/16 ; H01L21/311 ; H01L21/02 ; H01L21/3105 ; G03F7/42 ; H01L21/266

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING A COMPOSITION FOR REMOVING PHOTORESIST AND METHODS OF REMOVING PHOTORESIST FROM A SEMICONDUCTOR SUBSTRATE

Abstract:

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Abstract(Chinese):

基于组合物的总重量，用于除去光致抗蚀剂的组合物，其包含约0.5重量％至约10重量％的烷基铵氟化物盐; 基于组合物的总重量的约1重量％至约20重量％的量的有机磺酸; 和基于组合物总重量的约70重量％至约98.5重量％的内酯类溶剂。

Public/Granted literature

US10025192B2 Methods of manufacturing semiconductor devices using a composition for removing photoresist and methods of removing photoresist from a semiconductor substrate Public/Granted day:2018-07-17

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS