发明申请
- 专利标题： INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 集成电路装置及其制造方法
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申请号： US14955205申请日： 2015-12-01
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公开(公告)号： US20160315165A1公开(公告)日： 2016-10-27
- 发明人: Dong-soo LEE , Hu-yong LEE , Won-keun CHUNG , Hoon-joo NA , Taek-soo JEON , Sang-jin HYUN
- 申请人： Dong-soo LEE , Hu-yong LEE , Won-keun CHUNG , Hoon-joo NA , Taek-soo JEON , Sang-jin HYUN
- 优先权： KR10-2015-0056008 20150421
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L29/78 ; H01L27/092
摘要：
An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer.
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