发明申请
US20160320715A1 MIRROR BLANK FOR EUV LITHOGRAPHY WITHOUT EXPANSION UNDER EUV RADIATION
审中-公开
用于EUV辐射下的扩展的非线性滤波器的MIRROR BLANK
- 专利标题： MIRROR BLANK FOR EUV LITHOGRAPHY WITHOUT EXPANSION UNDER EUV RADIATION
- 专利标题（中）： 用于EUV辐射下的扩展的非线性滤波器的MIRROR BLANK
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申请号： US15024236申请日： 2014-09-10
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公开(公告)号： US20160320715A1公开(公告)日： 2016-11-03
- 发明人: Klaus BECKER , Stephan THOMAS
- 申请人： Heraeus Quarzglas GmbH & Co. KG
- 申请人地址： DE Hanau
- 专利权人： Heraeus Quarzglas GmbH & Co. KG
- 当前专利权人： Heraeus Quarzglas GmbH & Co. KG
- 当前专利权人地址： DE Hanau
- 优先权： DE102013219808.6 20130930
- 国际申请： PCT/EP2014/069302 WO 20140910
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G02B7/00 ; C03C3/06
摘要：
A substrate for an EUV mirror which contains a zero crossing temperature profile that departs from the statistical distribution is provided. A method for producing a substrate for an EUV mirror is also provided, in which the zero crossing temperature profile in the substrate is adapted to the operating temperature of the mirror. A lithography method using the substrate is also described.